1 aos semiconductor product reliability report AOB2500L , rev a plastic encapsulated device alpha & omega semiconductor, inc www.aosmd.com
2 this aos product reliability report summarizes the qualification result for AOB2500L . ac celerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. review of final electrical test result confirms that AOB2500L passes aos quality and reliability requirements. table of contents: i. product description ii. package and die information iii. environmental stress test summary and result iv. reliability evaluation v. appendix : test data i. product description: the AOB2500L uses trench mosfet technology that is uniquely optimized to provide the mos t efficient high frequency switching performance. both conduction and switching power losses are minimized due to an extremely low combination of r ds(on) , ciss and coss. this device is ideal for boost converters and synchronous rectifiers for consumer, tel ecom, industrial power supplies and led backlighting. - rohs compliant - halogen - free details refer to the datasheet. ii. die / package information: AOB2500L process standard sub - micron 150 v n - channel mosfet package type to 2 63 lead frame bare cu die attach soft solder bond ing al wire mold material epoxy resin with silica filler moisture level up to level 1
3 iii. result of reliability stress for AOB2500L note a: the reliability data presents total of available generic data up to the published date. iv. reliability ev aluation fit rate (per billion): 3.27 mttf = 34906 years the presentation of fit rate for the individual product reliability is restricted by the actual burn - in sample size of the selected product ( AOB2500L ). failure rate determination is based on jedec standard jesd 85. fit means one failure per billion hours. failure rate (fit) = chi 2 x 10 9 / [ 2 (n) (h) (af) ] = 1.8 3 x 10 9 / [ 2x ( 4 x77 x 500 + 12 x 77x 1 000 ) x259 ] = 3.27 mttf = 10 9 / fit = 3.06 x 10 8 hrs = 34906 years chi2 = chi squared distribution, determine d by the number of failures and confidence interval n = total number of units from htrb and htgb tests h = duration of htrb/htgb testing af = acceleration factor from test to use conditions (ea = 0.7ev and tuse = 55 c ) acceleration factor [ af ] = exp [ea / k (1/tj u C 1/tj s )] acceleration factor ratio list: 55 deg c 70 deg c 85 deg c 100 deg c 115 deg c 130 deg c 150 deg c af 25 9 87 32 13 5.64 2.59 1 tj s = stressed junction temperature in degree (kelvin), k = c+273.16 tj u =the use junction temperature in degree (kelvin), k = c+273.16 k = boltz m anns constant, 8.6 17164 x 10 - 5 e v / k test item test condition time point lot attribution total sample size number of failures reference standard msl precondition 168hr 85 c /85%rh +3 cycle reflow@2 6 0 c - 12 lots 2 541 pcs 0 jesd22 - a113 htgb temp = 150 c , vgs=100% of vgsmax 168 hrs 500 hrs 1000 hrs 2 lots 6 lot s 616 pcs 77 pcs / lot 0 jesd22 - a108 htrb temp = 150 c , vds=80% of vdsmax 168 hrs 500 hrs 1000 hrs 2 lots 6 lots 616 pcs 77 pcs / lot 0 jesd22 - a108 hast 130 c , 85% rh , 33.3 psi, v d s = 8 0% of v d s max 96 hrs 9 lots (note a *) 693 pcs 77 pcs / lot 0 jesd 22 - a110 pressure pot 121 c , 29.7psi , rh=100% 96 hrs 12 lots (note a *) 924 pcs 77 pcs / lot 0 jesd22 - a102 temperature cycle - 65 c to 150 c , air to air, 250 / 500 cycles 12 lots (note a *) 924 pcs 77 pcs / lot 0 jesd22 - a104
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